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S10H050S

SI-TECH
Part Number S10H050S
Manufacturer SI-TECH
Description N-Channel MOSFET
Published Sep 23, 2017
Detailed Description SI-TECH SEMICONDUCTOR CO.,LTD S10H050R/S N-Channel MOSFET Features █100V,130A,Rds(on)(typ)=5m @Vgs=10V █High Rugged...
Datasheet PDF File S10H050S PDF File

S10H050S
S10H050S

Overview
SI-TECH SEMICONDUCTOR CO.
,LTD S10H050R/S N-Channel MOSFET Features █100V,130A,Rds(on)(typ)=5m @Vgs=10V █High Ruggedness █Fast Switching █100% Avalanche Tested █Improved dv/dt Capability █ Split-Gate MOS Technology General Description This Power MOSFET is produced using Si-Tech’s advanced Split-Gate MOS Technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS PD TJ TSTG Drain-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25℃) Derating Factor above 25℃ Operating Junction...


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