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MIP4170MD

Panasonic
Part Number MIP4170MD
Manufacturer Panasonic
Description Silicon MOSFET
Published Sep 29, 2017
Detailed Description Intelligent Power Devices (IPDs) MIP4170MD Silicon MOS FET type integrated circuit  Features  Highly effective and l...
Datasheet PDF File MIP4170MD PDF File

MIP4170MD
MIP4170MD


Overview
Intelligent Power Devices (IPDs) MIP4170MD Silicon MOS FET type integrated circuit  Features  Highly effective and low noise at a regular load are achieved.
Power consumption at a light load is reduced.
Transformer sound measures are unnecessary.
 Reduces circuit power consumption by supplying IPD inner circuit current from input terminal of auxiliary winding voltage (VCC)  Detects over voltage protection when auxiliary winding voltage exceeds setting value, which stops oscillation at latch mode.
 Built-in timer latching function and over heating protective function under over load.
 Applications  For artificial resonance power source  Absolute Maximum Ratings Ta = 25°C±3°C Parameter Symbol Rating Unit DRAIN voltage VD - 0.
3 to +700 V VCC voltage VCC - 0.
3 to +45 V VDD voltage VDD - 0.
3 to +9 V FB voltage VFB - 0.
3 to +6 V TR voltage VTR - 0.
4 to +10 V Drain peak current * IDP 4.
8 A Channel temperature Tch 150 °C Storage temperatur...



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