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MIP3E30MY

Panasonic
Part Number MIP3E30MY
Manufacturer Panasonic
Description Silicon MOSFET
Published Sep 29, 2017
Detailed Description MIP3E30MY MOS (IPD) ■ • (MIP2ExD • • ■ • ■ 50% ) VD 700 VC 8 ID 0.88 IDP 1.7 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A...
Datasheet PDF File MIP3E30MY PDF File

MIP3E30MY
MIP3E30MY

Overview
MIP3E30MY MOS (IPD) ■ • (MIP2ExD • • ■ • ■ 50% ) VD 700 VC 8 ID 0.
88 IDP 1.
7 IC 0.
1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ Control ■ • TO-220-A2 • 1: Control 2: Source 3: Drain ■ : MIP3E30MY Drain Max.
duty clock SQ RQ SQ RQ MOSFET : 2010 3 SLB00056BJD Source 1 MIP3E30MY ■ TC = 25°C ± 3°C PWM / ) *: fOSC VC = VC(CNT) − 0.
2 V, VD = 5 V MAXDC VC = VC(CNT) − 0.
2 V, VD = 5 V * GPWM VC = VC(CNT) IC(SB)1 IC(SB)2 IC(OP) VC(ON) VC(OFF) ∆VC VC(CLP) TSW / TTIM fTIM IC(CHG) VC(CNT) * ∆VC(CNT) VD(MIN) VC < VC(ON) , VD = 5 V VC > VC(CNT) , VD = 5 V VC = VC(CNT) − 0.
2 V, VD = 5 V VD = 5 V VD = 5 V VD = 5 V IC = 1 mA, VD = 5 V VC = 0 V, VD = 40 V VC = 5 V, VD = 40 V VD = 5 V VD = ...


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