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STD8N80K5

STMicroelectronics
Part Number STD8N80K5
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Oct 8, 2017
Detailed Description STD8N80K5 Datasheet N-channel 800 V, 0.8 Ω typ., 6 A MDmesh K5 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G...
Datasheet PDF File STD8N80K5 PDF File

STD8N80K5
STD8N80K5

Overview
STD8N80K5 Datasheet N-channel 800 V, 0.
8 Ω typ.
, 6 A MDmesh K5 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS RDS(on) max.
ID STD8N80K5 800 V 0.
95 Ω 6A • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected PTOT 110 W Applications • Switching applications AM01476v1_tab Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Product status links STD8N80K5 Product summary Order code STD8N80K5 Marking 8N80K5 Package DPAK Packing Tape and reel DS9561 - Rev 4 - May 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current pulsed PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt (3) MOSFET dv/dt ruggedness Tj Operating junction temperature range Tstg Storage temperature range 1.
Pulse width limited by safe operating area.
2.
ISD≤ 6 A, di/dt ≤ 100 A/μs; VDS (peak) ≤ V(BR)DSS 3.
VDS ≤ 640 V Table 2.
Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA (1) Thermal resistance, junction-to-ambient 1.
When mounted on 1inch² FR-4 board, 2 oz Cu Symbol IAR EAS Table 3.
Avalanche characteristics Parameter Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax.
) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) STD8N80K5 Electrical ratings Value ±30 6 4 24 110 4.
5 50 - 55 to 150 Unit V A A A W V/n...


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