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BYD11D

NXP
Part Number BYD11D
Manufacturer NXP
Description Controlled avalanche rectifiers
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD11 series Controlled avalanche rectifiers Product specific...
Datasheet PDF File BYD11D PDF File

BYD11D
BYD11D

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD11 series Controlled avalanche rectifiers Product specification Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product specification Controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack.
DESCRIPTION MARKING Cavity free cylindrical glass package through Implotec™(1) technology.
This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
k a BYD11 series MAM196 Fig.
1 Simplified outline (SOD91) and symbol.
TYPE NUMBER BYD11D BYD11G BYD11J BYD11K BYD11M 11D 11G 11J 11K 11M MARKING CODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM BYD11D BYD11G BYD11J BYD11K BYD11M VRWM crest working reverse voltage BYD11D BYD11G BYD11J BYD11K BYD11M VR continuous reverse voltage BYD11D BYD11G BYD11J BYD11K BYD11M − − − − − 200 400 600 800 1000 V V V V V − − − − − 200 400 600 800 1000 V V V V V PARAMETER repetitive peak reverse voltage − − − − − 200 400 600 800 1000 V V V V V CONDITIONS MIN.
MAX.
UNIT 1996 Sep 26 2 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BYD11 series SYMBOL IF(AV) PARAMETER average forward current CONDITIONS Ttp = 55 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 Tamb = 60 °C; PCB mounting (see Fig.
9); averaged over any 20 ms period; see Figs 3 and 4 MIN.
− MAX.
0.
50 A UNIT − 0.
37 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax t = 20 µs half sinewave; Tj = Tj max prior to surge see Fig.
5 − 10 A PRSM Tstg Tj non-repetitive peak reverse power dissipation storage temperature junction temperature − −65 −65 200 +...


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