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BYD12M

NXP
Part Number BYD12M
Manufacturer NXP
Description Controlled avalanche rectifiers
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D423 BYD12 series Controlled avalanche rectifiers Preliminary spe...
Datasheet PDF File BYD12M PDF File

BYD12M
BYD12M

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D423 BYD12 series Controlled avalanche rectifiers Preliminary specification 1998 Dec 03 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack.
handbook, k halfpage BYD12 series hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION Cavity free cylindrical glass SOD120 package through Implotec™(1) technology.
This package is a MGL571 Fig.
1 Simplified outline (SOD120) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM BYD12D BYD12G BYD12J BYD12K BYD12M VR continuous reverse voltage BYD12D BYD12G BYD12J BYD12K BYD12M IF(AV) average forward current Tamb = 25 °C; printed-circuit board mounting, pitch 5 mm, see Fig.
6; averaged over any 20 ms period, see Fig.
2 t = 10 ms half sinewave; Tj = 25 °C prior to surge; VR = VRRMmax see Fig.
3 − − − − − − 200 400 600 800 1000 V V V V V PARAMETER repetitive peak reverse voltage − − − − − 200 400 600 800 1000 V V V V V CONDITIONS MIN.
MAX.
UNIT 0.
82 A IFSM non-repetitive peak forward current − 15 A Tstg Tj storage temperature junction temperature −65 −65 +175 +175 °C °C 1998 Dec 03 2 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL VF IR PARAMETER forward voltage reverse current IF = 1 A; see Fig.
4 VR = VRRMmax VR = VRRMmax; Tj = 165 °C; see Fig.
5 THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS CONDITIONS BYD12 series MAX.
1.
05 1 100 V UNIT µA µA VALUE 150 UNIT K/W 1.
Device mounted on an epoxy-glass printed-circuit board, 1.
5 mm thi...


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