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BYG10M

Vishay Telefunken
Part Number BYG10M
Manufacturer Vishay Telefunken
Description Silicon Mesa SMD Rectifier
Published Mar 23, 2005
Detailed Description BYG10 Vishay Telefunken Silicon Mesa SMD Rectifier Features D D D D D Controlled avalanche characteristics Glass passiv...
Datasheet PDF File BYG10M PDF File

BYG10M
BYG10M

Overview
BYG10 Vishay Telefunken Silicon Mesa SMD Rectifier Features D D D D D Controlled avalanche characteristics Glass passivated junction Low reverse current High surge current capability Wave and reflow solderable 15 811 Applications Surface mounting General purpose rectifier Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Test Conditions Type BYG10D BYG10G BYG10J BYG10K BYG10M Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM IFAV Tj=Tstg I(BR)R=1A, Tj=25°C ER Value 200 400 600 800 1000 30 1.
5 –55.
.
.
+150 20 Unit V V V V V A A °C mJ Peak forward surge current Average forward current Junction and storage temperature range Pulse energy in avalanche mode, non repetitive (inductive load switch off) tp=10ms, half sinewave Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Junction lead TL=const.
Junction ambient mounted on epoxy–glass hard tissue mounted on epoxy–glass hard tissue, 50mm2 35mm Cu mounted on Al–oxid–ceramic (Al2...


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