DatasheetsPDF.com

CXK77B3610GB

Part Number	CXK77B3610GB
Manufacturer	Sony
Description	High Speed Bi-CMOS Synchronous Static RAM
Published	Oct 18, 2017
Detailed Description	CXK77B3610GB -6/7 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please ...
Datasheet	CXK77B3610GB PDF File

Overview

CXK77B3610GB -6/7 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please contact the sales office.
Description The CXK77B3610GB-6/7 is a high speed 1M bit 119 pin BGA (Plastic) Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits.
This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles.
Features • Fast cycle time (Cycle) (Frequency) CXK77B3610GB-6 6ns 166MHz CXK77B3610GB-7 7ns 142MHz • Inputs and outputs are LVTTL/LVCMOS compatible • Single 3.
3V power supply: 3.
3V ± 0.
15V • Byte-write possible • OE asynchronization • JTAG test circuit • Package 119TBGA • 3 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru mode (R-F mode) Register-Latch mode (R-L mode) Function 32768 word × 36bit High Speed Bi-CMOS Synchronous SRAM Structure Silicon gate...

Similar Datasheet

CXK77B3610GB High Speed Bi-CMOS Synchronous Static RAM - Sony
CXK77B3610GB-6 High Speed Bi-CMOS Synchronous Static RAM - Sony Corporation
CXK77B3610GB-7 High Speed Bi-CMOS Synchronous Static RAM - Sony Corporation

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)