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3N10L26

Infineon
Part Number 3N10L26
Manufacturer Infineon
Description Power-Transistor
Published Oct 19, 2017
Detailed Description OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C p...
Datasheet PDF File 3N10L26 PDF File

3N10L26
3N10L26

Overview
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPD35N10S3L-26 Product Summary V DS R DS(on),max ID 100 V 26 mW 35 A PG-TO252-3-11 Type IPD35N10S3L-26 Package Marking PG-TO252-3-11 3N10L26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=17A Avalanche current, single pulse I AS Gate source voltage2) V GS Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 35 25 140 175 35 ±20 71 -55 .
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+175 55/175/56 Unit A mJ A V W °C Rev.
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1 page 1 2011-10-06 IPD35N10S3L-26 Parameter Symbol Conditions Thermal characteris...


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