DatasheetsPDF.com

TK4R4P06PL

Toshiba
Part Number TK4R4P06PL
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Oct 19, 2017
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS�-H) TK4R4P06PL 1. Applications • High-Efficiency DC-DC Converters • Switching Volta...
Datasheet PDF File TK4R4P06PL PDF File

TK4R4P06PL
TK4R4P06PL

Overview
MOSFETs Silicon N-channel MOS (U-MOS�-H) TK4R4P06PL 1.
Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2.
Features (1) High-speed switching (2) Small gate charge: QSW = 15.
1 nC (typ.
) (3) Small output charge: Qoss = 39 nC (typ.
) (4) Low drain-source on-resistance: RDS(ON) = 3.
4 mΩ (typ.
) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.
5 to 2.
5 V (VDS = 10 V, ID = 0.
5 mA) 3.
Packaging and Internal Circuit TK4R4P06PL DPAK 1: Gate 2: Drain (heatsink) 3: Source ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2017-04 2021-01-27 Rev.
3.
0 TK4R4P06PL 4.
Absolute Maximum Ratings (Note) (Ta = 25 � unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) VDSS 60 V VGSS ±20 (Tc = 25 �) (Note 1) ID 58 A Drain current (DC) Drain current (pulsed) Power dissipation (Silicon limit) (Note 1), (Note 2) ID (t = 100 µs) (Note 1) IDP (Tc = 25 �) PD 106 330 87 W Single-pulse avalanche energy (Note 3) EAS 42 mJ Single-pulse avalanche current Channel temperature Storage temperature (Note 3) IAS Tch Tstg 58 A 175 � -55 to 175 � Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance (Tc = 25 �) Note 1: Ensure that the ch...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)