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BYV10-30

NXP
Part Number BYV10-30
Manufacturer NXP
Description Schottky barrier diodes
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 BYV10 series Schottky barrier diodes Product specification Supersedes...
Datasheet PDF File BYV10-30 PDF File

BYV10-30
BYV10-30

Overview
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 BYV10 series Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 13 Philips Semiconductors Product specification Schottky barrier diodes FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Hermetically sealed leaded glass package.
APPLICATIONS • Low power, switched-mode power supplies • Rectifying • Polarity protection.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM BYV10-20 BYV10-30 BYV10-40 IF(AV) Tstg Tj Note 1.
Refer to SOD81 standard mounting conditions.
average forward current storage temperature junction temperature note 1 PARAMETER repetitive peak reverse voltage − − − − −65 − CONDITIONS handbook, 4 columns BYV10 series DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology.
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