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MBRB3030CTL

ON Semiconductor
Part Number MBRB3030CTL
Manufacturer ON Semiconductor
Description Power Rectifier
Published Oct 30, 2017
Detailed Description MBRB3030CTL Advance Information SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a proprieta...
Datasheet PDF File MBRB3030CTL PDF File

MBRB3030CTL
MBRB3030CTL

Overview
MBRB3030CTL Advance Information SWITCHMODE™ Power Rectifier .
.
.
using the Schottky Barrier principle with a proprietary barrier metal.
These state–of–the–art devices have the following features: Features: • Dual Diode Construction — May be Paralleled for Higher Current Output • Guardring for Stress Protection • Low Forward Voltage Drop • 125°C Operating Junction Temperature • Maximum Die Size • Short Heat Sink Tab Manufactured — Not Sheared! MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 115°C) Per Device Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 115°C) Non–Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (1.
0 ms, 1.
0 kHz) Storage Temperature Range Symbol VRRM VRWM VR IO IFRM IFSM IRRM Tstg Operating Junction Temperature Rang...


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