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BUK436W-800B

NXP
Part Number BUK436W-800B
Manufacturer NXP
Description PowerMOS transistor
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B GENERAL DESCRIPTION N-channel enhanc...
Datasheet PDF File BUK436W-800B PDF File

BUK436W-800B
BUK436W-800B

Overview
Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK436 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
-800A 800 4 125 3 MAX.
-800B 800 3.
5 125 4 UNIT V A W Ω PINNING - SOT429 (TO247) PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION SYMBOL d g 1 2 3 s L...


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