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BUK444-60H

Part Number	BUK444-60H
Manufacturer	NXP
Description	PowerMOS transistor
Published	Mar 23, 2005
Detailed Description	Philips Semiconductors Product specification PowerMOS transistor BUK444-60H GENERAL DESCRIPTION N-channel enhancemen...
Datasheet	BUK444-60H PDF File

Overview

Philips Semiconductors Product specification PowerMOS transistor BUK444-60H GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
The device is intended for use in Automotive applications, Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX.
60 21 30 150 38 UNIT V A W ˚C mΩ PINNING - SOT186 PIN 1 2 3 gate drain DESCRIPTION PIN CONFIGURATION case SYMBOL d g source 1...

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