DatasheetsPDF.com

BUK446-1000B

NXP
Part Number BUK446-1000B
Manufacturer NXP
Description PowerMOS transistor
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product Specification PowerMOS transistor BUK446-1000B GENERAL DESCRIPTION N-channel enhancem...
Datasheet PDF File BUK446-1000B PDF File

BUK446-1000B
BUK446-1000B

Overview
Philips Semiconductors Product Specification PowerMOS transistor BUK446-1000B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
1000 1.
5 30 5 UNIT V A W Ω PINNING - SOT186 PIN 1 2 3 gate drain source DESCRIPTION PIN CONFIGURATION case SYMBOL d g case isolated 1 2 3 s LIMITING VALUES Limiting value...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)