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BUK451-100B

NXP
Part Number BUK451-100B
Manufacturer NXP
Description PowerMOS transistor
Published Mar 23, 2005
Detailed Description Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B GENERAL DESCRIPTION N-channel enh...
Datasheet PDF File BUK451-100B PDF File

BUK451-100B
BUK451-100B

Overview
Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK451 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX.
-100A 100 3.
0 40 175 0.
85 MAX.
-100B 100 3.
0 40 175 1.
1 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN.
- 55 -100A 3.
0 3.
0 12 40 175 175 MAX.
100 100 30 -100B 3.
0 3.
0 12 UNIT V V V A A A W ˚C ˚C Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN.
TYP.
60 MAX.
3.
75 UNIT K/W K/W STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.
25 mA VDS = VGS; ID = 1 mA VDS = 100 V; VGS = 0 V; Tj = 25 ˚C VDS = 100 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; BUK451-100A ID = 2.
5 A B...


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