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BUK475-100B

NXP
Part Number BUK475-100B
Manufacturer NXP
Description PowerMOS transistor
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-100A/B GENERAL DESCRIPTION...
Datasheet PDF File BUK475-100B PDF File

BUK475-100B
BUK475-100B

Overview
Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
BUK475-100A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK475 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX.
-100A 100 14 30 150 0.
08 MAX.
-100B 100 12 30 150 0.
1 UNIT V A W ˚C Ω PINNING - SOT186A PIN 1 2 3 gate drain source DESCRIPTION PIN CONFIGURATION case SYMBOL d g case isolated 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC)...


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