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BUK483-60A

NXP
Part Number BUK483-60A
Manufacturer NXP
Description PowerMOS transistor
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistor BUK483-60A GENERAL DESCRIPTION N-channel enhancemen...
Datasheet PDF File BUK483-60A PDF File

BUK483-60A
BUK483-60A

Overview
Philips Semiconductors Product specification PowerMOS transistor BUK483-60A GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.
The device is intended for use in automotive and general purpose switching applications.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 10 V MAX.
60 3.
2 1.
8 150 0.
10 UNIT V A W ˚C Ω PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL d g 1 2 3 s LIMITING VALUES Limiting values in acco...


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