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BUK542-60B

NXP
Part Number BUK542-60B
Manufacturer NXP
Description PowerMOS transistor
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhance...
Datasheet PDF File BUK542-60B PDF File

BUK542-60B
BUK542-60B

Overview
Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
BUK542-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK542 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance; VGS = 5 V MAX.
-60A 60 9.
2 22 0.
15 MAX.
-60B 60 8.
4 22 0.
18 UNIT V A W Ω PINNING - SOT186 PIN 1 2 3 gate drain source DESCRIPTION ...


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