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MT41K128M16

Micron Technology
Part Number MT41K128M16
Manufacturer Micron Technology
Description 1.35V DDR3L SDRAM
Published Nov 5, 2017
Detailed Description 2Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 bank...
Datasheet PDF File MT41K128M16 PDF File

MT41K128M16
MT41K128M16

Overview
2Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description The 1.
35V DDR3L SDRAM device is a low-voltage version of the 1.
5V DDR3 SDRAM device.
Refer to the DDR3 (1.
5V) SDRAM data sheet specifications when running in 1.
5V compatible mode.
Features • VDD = VDDQ = 1.
35V (1.
283–1.
45V) • Backward-compatible to VDD = VDDQ = 1.
5V ±0.
075V • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS (READ) latency (CL) • Programmable posted CAS additive latency (AL) • Programmable CAS (WRITE) latency (CWL) • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) • Selectable BC4 or BL8 on-the-fly (OTF) • Self refresh mode • TC of 95°C – 64ms, 819...


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