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BUK565-60H

NXP
Part Number BUK565-60H
Manufacturer NXP
Description PowerMOS transistor Logic level FET
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhance...
Datasheet PDF File BUK565-60H PDF File

BUK565-60H
BUK565-60H

Overview
Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.
The device is intended for use in automotive and general purpose switching applications.
BUK565-60H QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX.
60 41 125 175 38 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g source drain 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ±VGSM ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total...


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