DatasheetsPDF.com

BUK573-48C

Part Number	BUK573-48C
Manufacturer	NXP
Description	PowerMOS transistor Clamped logic level FET
Published	Mar 23, 2005
Detailed Description	Philips Semiconductors Product specification PowerMOS transistor Clamped logic level FET GENERAL DESCRIPTION Protected...
Datasheet	BUK573-48C PDF File

Overview

Philips Semiconductors Product specification PowerMOS transistor Clamped logic level FET GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.
The device is intended for use in automotive applications.
It has built-in zener diodes providing active drain voltage clamping.
BUK573-48C QUICK REFERENCE DATA SYMBOL V(CL)DSR ID Ptot WDSRR RDS(ON) PARAMETER Drain-source clamp voltage Drain current (DC) Total power dissipation Repetitive clamped turn off energy; Tj = 150˚C Drain-source on-state resistance; VGS = 5 V MIN.
40 TYP.
MAX.
UNIT 48 58 13 25 50 85 V A W mJ mΩ PINNING - SOT186A PIN 1 2 3 gate drain source DESCR...

Similar Datasheet

BUK573-48C PowerMOS transistor Clamped logic level FET - NXP

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)