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BUK78150-55

NXP
Part Number BUK78150-55
Manufacturer NXP
Description TrenchMOS transistor Standard level FET
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel en...
Datasheet PDF File BUK78150-55 PDF File

BUK78150-55
BUK78150-55

Overview
Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.
Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection.
It is intended for use in automotive and general purpose switching applications.
BUK78150-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.
55 5.
5 1.
8 150 150 UNIT V A W ˚C mΩ PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL d g s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID ID IDM Ptot Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source...


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