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BUK856-800A

NXP
Part Number BUK856-800A
Manufacturer NXP
Description Insulated Gate Bipolar Transistor IGBT
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A GENERAL DESCRIPTIO...
Datasheet PDF File BUK856-800A PDF File

BUK856-800A
BUK856-800A

Overview
Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope.
The device is intended for use in motor control, DC/DC and AC/DC converters, and in general purpose high frequency switching applications.
QUICK REFERENCE DATA SYMBOL VCE IC Ptot VCEsat Eoff PARAMETER Collector-emitter voltage Collector current (DC) Total power dissipation Collector-emitter on-state voltage Turn-off energy Loss MAX.
800 24 125 3.
5 1.
0 UNIT V A W V mJ PINNING - TO220AB PIN 1 2 3 tab gate collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c g 1 23 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCE VCGR ±VGE IC IC ICLM ICM Ptot Tstg Tj PARAMETER Collector-emitter voltage Collector-gate voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector Current (Clamped Indu...


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