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BUK9505-30A

NXP
Part Number BUK9505-30A
Manufacturer NXP
Description TrenchMOS transistor Logic level FET
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhan...
Datasheet PDF File BUK9505-30A PDF File

BUK9505-30A
BUK9505-30A

Overview
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance.
It is intended for use in automotive and general purpose switching applications.
BUK9505-30A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX.
30 75 230 175 5 4.
6 UNIT V A W ˚C mΩ mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g source drain 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ±VGSM ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ tp≤50µS Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN.
- 55 MAX.
30 30 10 15 75 75 400 230 175 UNIT V V V V A A A W ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS in free air TYP.
60 MAX.
0.
65 UNIT K/W K/W August 1999 1 Rev 1.
100 Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.
25 mA; Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C VDS = 30 V; VGS = 0 V; VGS = ±10 V; VDS = 0 V VGS = 5 V; ID = 25 A VGS = 10 V; ID = 25 A VGS = 4.
5 V; I...


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