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BUK9528-55

NXP
Part Number BUK9528-55
Manufacturer NXP
Description TrenchMOS transistor Logic level FET
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhan...
Datasheet PDF File BUK9528-55 PDF File

BUK9528-55
BUK9528-55

Overview
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.
The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV.
It is intended for use in automotive and general purpose switching applications.
BUK9528-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX.
55 40 96 175 28 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g s 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain c...


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