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BUK9605-30A

NXP
Part Number BUK9605-30A
Manufacturer NXP
Description TrenchMOS transistor Logic level FET
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhan...
Datasheet PDF File BUK9605-30A PDF File

BUK9605-30A
BUK9605-30A

Overview
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.
Using ’trench’ technology the device features very low on-state resistance.
It is intended for use in automotive and general purpose switching applications.
BUK9605-30A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX.
30 75 230 175 5 4.
6 UNIT V A W ˚C mΩ mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain (no connection ...


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