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BUK9618-30

NXP
Part Number BUK9618-30
Manufacturer NXP
Description TrenchMOS transistor Logic level FET
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhan...
Datasheet PDF File BUK9618-30 PDF File

BUK9618-30
BUK9618-30

Overview
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.
The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV.
It is intended for use in automotive and general purpose switching applications.
BUK9618-30 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX.
30 55 103 175 18 UNIT V A W ˚C mΩ PINNING - SO...


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