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BUL147F

Motorola Inc
Part Number BUL147F
Manufacturer Motorola Inc
Description POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description BUL216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIG...
Datasheet PDF File BUL147F PDF File

BUL147F
BUL147F


Overview
BUL216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE HIGH RUGGEDNESS 3 1 2 APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL216 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance.
It uses a Hollow Emitter structure to enhance switching speeds.
The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max.
Operating Junction Temperature Value 1600 800 9 4 6 2 4 90 -65 to 150 150 Uni t V V V A A A A W o o C C September 1997 1/6 BUL216 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.
39 62.
5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO V CEO(sus) V EBO V CE(sat )∗ V BE(s at)∗ h FE∗ Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain INDUCTIVE LOAD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime Test Cond ition s V CE = 1600 V V CE = 1600 V V CE = 800 V I C = 100 mA I E = 10 mA IC = 1 A IC = 2 A IC = 1 A IC = 2 A IB = 0.
2 A IB = 0.
66 A IB = 0.
2 A IB = 0.
66 A V CE = 5 V V CE = 5 V IB1 = 0.
5 A R BB = 0 Ω L = 200 µ H IB1 = 0.
5 A R BB = 0 Ω L = 200 µ H 12 10 2.
1 450 3 600 L ...


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