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BUL213

STMicroelectronics
Part Number BUL213
Manufacturer STMicroelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description ® BUL213 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s STMicroelectronics PREFERRED SALESTYPE NPN ...
Datasheet PDF File BUL213 PDF File

BUL213
BUL213

Overview
® BUL213 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC 1 2 3 APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL213 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance.
It uses a Hollow Emitter structure to enhance switching speeds.
The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max.
Operating Junction Temperature Value 1300 600 9 3 6 2 4 60 -65 to 150 150 Unit V V V A A A A W o o C C February 2003 1/6 BUL213 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.
08 62.
5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Test Conditions V CE = 1300 V V CE = 1300 V V CE = 600 V I C = 100 mA L = 25 mH 600 T c = 125 o C Min.
Typ.
Max.
100 500 250 Unit µA µA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time I E = 10 mA I C = 0.
5 A IC = 1 A I C = 0.
5 A IC = 1 A I C = 0.
35 ...


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