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BUL58BSMD

Seme LAB
Part Number BUL58BSMD
Manufacturer Seme LAB
Description NPN Transistor
Published Mar 23, 2005
Detailed Description BUL58BSMD MECHANICAL DATA Dimensions in mm 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 ....
Datasheet PDF File BUL58BSMD PDF File

BUL58BSMD
BUL58BSMD

Overview
BUL58BSMD MECHANICAL DATA Dimensions in mm 0 .
8 9 (0 .
0 3 5 ) m in .
3 .
7 0 (0 .
1 4 6 ) 3 .
7 0 (0 .
1 4 6 ) 3 .
4 1 (0 .
1 3 4 ) 3 .
4 1 (0 .
1 3 4 ) 4 .
1 4 (0 .
1 6 3 ) 3 .
8 4 (0 .
1 5 1 ) 3 .
6 0 (0 .
1 4 2 ) M a x .
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE • FAST SWITCHING • HIGH ENERGY RATING 1 3 0 .
7 6 (0 .
0 3 0 ) m in .
1 0 .
6 9 (0 .
4 2 1 ) 1 0 .
3 9 (0 .
4 0 9 ) 2 1 6 .
0 2 (0 .
6 3 1 ) 1 5 .
7 3 (0 .
6 1 9 ) FEATURES 9 .
6 9 .
3 1 1 .
5 1 1 .
2 7 (0 8 (0 8 (0 8 (0 .
3 8 .
3 6 .
4 5 .
4 4 1 ) 9 ) 6 ) 4 ) 0 .
5 0 (0 .
0 2 0 ) 0 .
2 6 (0 .
0 1 0 ) • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
• Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
SMD1 PACKAGE Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter • Triple Guard Rings for improved control of high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc.
Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Derate above 25°C when used on efficient heatsink Operating and Storage Temperature Range Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk 180V 90V 10V 7A 10A 2A 50W 0.
28W/°C –65 to 200°C Prelim.
7/00 BUL58BSMD ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO hFE* DC Current Gain Test Conditions Min.
90 180 10 Typ.
Max.
Unit ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut–Off Current Collector Cut–Off Current Emitter Cut–Off Cu...


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