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GPT12N60

Part Number	GPT12N60
Manufacturer	Greatpower
Description	POWER FIELD EFFECT TRANSISTOR
Published	Nov 8, 2017
Detailed Description	GPT12N60 / GPT12N60D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an adva...
Datasheet	GPT12N60 PDF File

Overview

GPT12N60 / GPT12N60D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additiona...

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