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GPT08N65

Greatpower
Part Number GPT08N65
Manufacturer Greatpower
Description POWER FIELD EFFECT TRANSISTOR
Published Nov 8, 2017
Detailed Description GPT08N65 / GPT08N65D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an adva...
Datasheet PDF File GPT08N65 PDF File

GPT08N65
GPT08N65

Overview
GPT08N65 / GPT08N65D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Reduced Gate Charge Ultra Low On-Resistance Provides Higher Efficiency Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VD...


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