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BUP314D

Siemens Semiconductor Group
Part Number BUP314D
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BUP 314D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail cur...
Datasheet PDF File BUP314D PDF File

BUP314D
BUP314D

Overview
BUP 314D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Type BUP 314D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4226-A2 Pin 3 E VCE IC Package TO-218 AB 1200V 42A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current, (limited by bond wire) ± 20 A 42 33 TC = 60 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 84 66 TC = 25 °C TC = 90 °C Diode forward current IF 28 TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls 168 TC = 25 °C Power dis...


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