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ATF-44101

HP
Part Number ATF-44101
Manufacturer HP
Description 2-8 GHz Medium Power Gallium Arsenide FET
Published Nov 8, 2017
Detailed Description 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0␣ dBm Typical P...
Datasheet PDF File ATF-44101 PDF File

ATF-44101
ATF-44101

Overview
2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.
0␣ dBm Typical P 1dB at 4␣ ␣ GHz • High Gain at 1 dB Compression: 8.
5␣ dB Typical G 1dB at 4␣ GHz • High Power Efficiency: 35% Typical at 4␣ GHz • Hermetic Metal-Ceramic Stripline Package Description The ATF-44101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range.
This nominally .
5␣ micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between source fingers.
Total gate periphery is 5 millimeters.
Proven gold based metallization systems and nitri...


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