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BUW1015

STMicroelectronics
Part Number BUW1015
Manufacturer STMicroelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description ® BUW1015 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE...
Datasheet PDF File BUW1015 PDF File

BUW1015
BUW1015

Overview
® BUW1015 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY (> 1500 V) VERY HIGH SWITCHING SPEED s APPLICATIONS: HORIZONTAL DEFLECTION FOR HIGH-END COLOUR TV AND 19" MONITORS 3 DESCRIPTION The BUW1015 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB IBM Ptot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max.
Operating Junction Temperature Value 1500 700 10 14 18 8 11 160 -65 to 150 150 Unit V V V A A A A W o o C C 1/7 February 2002 BUW1015 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.
78 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES IEBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 T j = 125 o C Min.
Typ.
Max.
0.
2 2 100 Unit mA mA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO VCE(sat) ∗ V BE(sat) ∗ h FE ∗ Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time I E = 10 mA I C = 10 A I C = 10 A I C = 10 A I C = 10 A IB = 2 A IB = 2 A V CE = 5 V V CE = 5 V 10 1.
5 1.
5 7 5 10 14 V V V T j = 100 o C ts tf ts tf V CC = 400 V I B1 = 2 A I C = 10 A I B1 = 2 A V ceflyback IC = 10 A I B2 = -6 A 1.
5 110 4 220 µs ns µs ns f = 31250 Hz I B2 = -6 A π  = 1200 sin  106 t V 5   ts tf ∗ Pulsed: Pulse d...


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