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BUW12AW

NXP
Part Number BUW12AW
Manufacturer NXP
Description Silicon diffused power transistors
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification Supersedes ...
Datasheet PDF File BUW12AW PDF File

BUW12AW
BUW12AW


Overview
DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package.
APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems.
PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter 1 2 3 MBK117 BUW12W; BUW12AW 2 1 MBB008 3 Fig.
1 Simplified outline (SOT429) and symbol.
QUICK REFERENCE DATA SYMBOL VCESM BUW12W BUW12AW VCEO collector-emitter voltage BUW12W BUW12AW VCEsat IC ICM Ptot tf collector-emitter saturation voltage collector current (DC) collector current (peak value) total power dissipation fall time see Figs 7 and 9 see Figs 2 and 4 see Fig 2 Tmb ≤ 25 °C; see Fig.
3 resistive load; see Figs 11 and 12 open base 400 450 1.
5 ...



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