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BUZ100SL-4

Siemens Semiconductor Group
Part Number BUZ100SL-4
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description Preliminary data BUZ 100SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-ra...
Datasheet PDF File BUZ100SL-4 PDF File

BUZ100SL-4
BUZ100SL-4

Overview
Preliminary data BUZ 100SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 100SL-4 VDS 55 V ID 7.
4 A RDS(on) 0.
023 Ω Package P-DSO-28 Ordering Code C67078-S.
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- .
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Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 7.
4 Unit A ID IDpuls 29.
6 TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse EAS 380 dv/dt 6 mJ ID = 7.
4 A, VDD = 25 V, RGS = 25 Ω L = 13.
8 mH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 7.
4 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation ,one channel active VGS Ptot ± 14 2.
4 V W TA = 25 °C Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Tj Tstg -55 .
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.
+ 175 -55 .
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+ 175 55 / 175 / 56 °C Semiconductor Group 1 01/Oct/1997 Preliminary data BUZ 100SL-4 Thermal Characteristics Parameter Symbol min.
Thermal resistance, junction - soldering point 1) Thermal resistance, junction - ambient 2) Values typ.
max.
tbd 62.
5 K/W Unit RthJS RthJA - 1) Device on 50mm*50mm*1.
5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection.
PCB is vertical without blown air.
2) one channel active Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static Characteristics Drain- source breakdown voltage Values typ.
max.
Unit V(BR)DSS 55 1.
6 0.
1 10 0.
019 2 V VGS = 0 V, ID = 0.
25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.
2 VGS=VDS, ID = 130 µA Zero gate voltage drain current IDSS 0.
1 1 100 µA VDS = 55 V, VGS = 0 V, Tj = -40 °C VDS = 55 V, VGS = 0 V, Tj = 25 °C VDS = 55 V, VGS = 0 V, Tj = 150 °C Gate-source leakage current IGSS 100 nA Ω 0.
023 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 5 V, ID = 7.
4 A Semiconductor Group 2 01/Oct/1997 Preliminary data BUZ 100SL-4 Electrical Characteristics, at Tj = 25°C, unless otherwise specifie...


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