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BUZ103SL-4

Siemens Semiconductor Group
Part Number BUZ103SL-4
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description Preliminary data BUZ 103SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-ra...
Datasheet PDF File BUZ103SL-4 PDF File

BUZ103SL-4
BUZ103SL-4

Overview
Preliminary data BUZ 103SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 103SL-4 VDS 55 V ID 4.
8 A RDS(on) 0.
055 Ω Package P-DSO-28 Ordering Code C67078-S.
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Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 4.
8 Unit A ID IDpuls 19.
2 TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse EAS 140 dv/dt 6 mJ ID = 4.
8 A, VDD = 25 V, RGS = 25 Ω L = 12 mH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 4.
8 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation ,one channel active VGS Ptot ± 14 2.
4 V W ...


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