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BUZ271

Siemens Semiconductor Group
Part Number BUZ271
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 255 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 ...
Datasheet PDF File BUZ271 PDF File

BUZ271
BUZ271

Overview
BUZ 255 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 255 VDS 200 V ID 13 A RDS(on) 0.
24 Ω Package TO-220 AB Ordering Code C67078-S1406-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 13 Unit A ID IDpuls 52 TC = 31 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 13 9 mJ ID = 13 A, VDD = 50 V, RGS = 25 Ω L = 1.
89 mH, Tj = 25 °C Gate source voltage Power dissipation 200 VGS Ptot ± 20 95 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip...


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