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BUZ272

Siemens Semiconductor Group
Part Number BUZ272
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 271 SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BU...
Datasheet PDF File BUZ272 PDF File

BUZ272
BUZ272

Overview
BUZ 271 SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 271 VDS -50 V ID -22 A RDS(on) 0.
15 Ω Package TO-220 AB Ordering Code C67078-S1453-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -22 Unit A ID IDpuls -88 TC = 26 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 200 mJ ID = -22 A, VDD = -25 V, RGS = 25 Ω L = 413 µH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IE...


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