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BUZ61A

Siemens Semiconductor Group
Part Number BUZ61A
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 61 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type B...
Datasheet PDF File BUZ61A PDF File

BUZ61A
BUZ61A

Overview
BUZ 61 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 61 A VDS 400 V ID 11 A RDS(on) 0.
5 Ω Package TO-220 AB Ordering Code C67078-S1341-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 11 Unit A ID IDpuls 44 TC = 27 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 12.
5 13 mJ ID = 12.
5 A, VDD = 50 V, RGS = 25 Ω L = 6.
38 mH, Tj = 25 °C Gate source voltage Power dissipation 570 VGS Ptot ± 20 150 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 0.
83 75 E 55 / 150 / 56 °C K/W 1 07/96 BUZ 61 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parame...


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