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BUZ60

Siemens Semiconductor Group
Part Number BUZ60
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 51 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ...
Datasheet PDF File BUZ60 PDF File

BUZ60
BUZ60


Overview
BUZ 51 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 51 VDS 1000 V ID 3.
4 A RDS(on) 4Ω Package TO-220 AB Ordering Code C67078-S1344-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 3.
4 Unit A ID IDpuls 13.
5 TC = 29 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3.
4 12 mJ ID = 3.
4 A, VDD = 50 V, RGS = 25 Ω L = 67 mH, Tj = 25 °C Gate source voltage Power dissipation 410 VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resi...



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