DatasheetsPDF.com

BUZ73AL

Siemens Semiconductor Group
Part Number BUZ73AL
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 73 AL SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 73...
Datasheet PDF File BUZ73AL PDF File

BUZ73AL
BUZ73AL

Overview
BUZ 73 AL SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 73 AL Pin 2 D Pin 3 S VDS 200 V ID 5.
5 A RDS(on) 0.
6 Ω Package TO-220 AB Ordering Code C67078-S1328-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 5.
5 Unit A ID IDpuls 22 TC = 37 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 7 6.
5 mJ ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.
67 mH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 120 VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 40 Tj Tstg RthJC RthJA -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 3.
1 75 E 55 / 150 / 56 °C K/W Semiconductor Group 1 07/96 BUZ 73 AL Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static Characteristics Drain- source breakdown voltage Values typ.
max.
Unit V(BR)DSS 200 1.
6 0.
1 10 10 0.
5 2 V VGS = 0 V, ID = 0.
25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.
2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 200 V, VGS = 0 V, Tj = 25 °C VDS = 200 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.
6 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 5 V, ID = 3.
5 A Semiconductor Group 2 07/96 BUZ 73 AL Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance Values typ.
max.
Unit gfs 5 6.
5 630 120 60 - S pF 840 200 90 ns 15 20 VDS≥ 2 * ID * RDS(on)max, ID = 3.
5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 M...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)