DatasheetsPDF.com

BXY42-T

Siemens Semiconductor Group
Part Number BXY42-T
Manufacturer Siemens Semiconductor Group
Description HiRel Silicon PIN Diode
Published Mar 23, 2005
Detailed Description HiRel Silicon PIN Diode Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor PIN Diode for high speed switchi...
Datasheet PDF File BXY42-T PDF File

BXY42-T
BXY42-T

Overview
HiRel Silicon PIN Diode Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor PIN Diode for high speed switching of RF signals Very low capacitance Hermetically sealed microwave package qualified ESA/SCC Detail Spec.
No.
: 5513/017 Electrostatic discharge sensitive device, observe handling precautions! T BXY 42 ESD: T1 Type BXY 42-T (ql) BXY 42-T1 (ql) Marking - Ordering Code see below see below Pin Configuration Package T T1 (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702X143 H: High Rel Quality, S: Space Quality, Ordering Code: on request Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702X168 (see Chapter Order Instructions for ordering example) Semiconductor Group 1 Draft A03 1998-04-01 BXY 42 Table 1 Parameter Maximum Ratings Symbol 1) Limit Values 50 5 600 350 Unit V A mW Reverse voltage Peak forward current Power dissipation BXY 42-T BXY 42-T1 Operating temperature range Storage temperature range Soldering temperature Junction temperature Thermal resistance junction-case BXY 42-T BXY 42-T1 1) VR IFM Ptot Top Tstg Tsol Tj Rth(j-c) - 55 to + 150 - 65 to + 175 + 250 175 200 350 °C °C °C °C K/W At tp = 1.
0 ms, duty cycle = 0.
001%.
Semiconductor Group 2 Draft A03 1998-04-01 BXY 42 Electrical Characteristics Table 2 Parameter Reverse current 1 VR1 = 50 V Reverse current 2 DC Characteristics at TA = 25 °C unless otherwise specified Symbol min.
Limit Values typ.
0.
97 max.
10 5 1.
1 mA nA V Unit IR1 IR2 VF VR2 = 40 V Forward voltage IF = 100 mA Table 3 Parameter Total capacitance VR = 50 V, f = 1 MHz Forward resistance f = 100 MHz, IF1 = 1 mA Forward resistance f = 100 MHz, IF2 = 10 mA Minority carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA AC Characteristics at TA = 25 °C unless otherwise specified Symbol min.
Limit Values typ.
0.
20 2 1 50 max.
0.
24 3.
5 2.
5 pF W W ns 35 Unit CT RF1 RF2 tL Semiconductor Group 3 Draft A03 1998-04-01 BXY 42 Order Instructions Full type variant includi...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)