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BY2000

Diotec Semiconductor
Part Number BY2000
Manufacturer Diotec Semiconductor
Description Silicon Rectifiers
Published Mar 23, 2005
Detailed Description BY 251 … BY 255, BY 1600 … BY 2000 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Ø 4.5 ±0.1 3A...
Datasheet PDF File BY2000 PDF File

BY2000
BY2000

Overview
BY 251 … BY 255, BY 1600 … BY 2000 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Ø 4.
5 ±0.
1 3A 200…2000 V ~ DO-201 1g Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx.
– Gewicht ca.
±0.
5 62.
5 Type 7.
5 ±0.
1 Ø 1.
2 ±0.
05 Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack see page 16 siehe Seite 16 Dimensions / Maße in mm Maximum ratings Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 200 400 600 800 1300 1600 1800 2000 4000.
.
.
16000 Grenzwerte Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] BY 251 BY 252 BY 253 BY 254 BY 255 BY 1600 BY 1800 BY 2000 higher voltages see page 191: BY 4.
.
.
BY 16 200 400 600 800 1300 1600 1800 2000 höhere Spannungen siehe Seite 191: 4000.
.
.
16000 TA = 50/C f > 15 Hz TA = 25/C TA = 25/C 3 A 1) 20 A 1) 100 A 50 A2s Max.
average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms 1 IFAV IFRM IFSM i2t ) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 64 28.
02.
2002 BY 251…BY 255, BY 1600…BY 2000 Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS – 50…+150/C – 50…+175/C Kennwerte Tj = 25/C Tj = 25/C IF = 3 A VR = VRRM VF IR RthA < 1.
1 V < 20 :A < 25 K/W 1) Characteristics Forward voltage – Durchlaßspannung Leakage current – Sperrstrom Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft 1 ) Valid, if leads are kept at ambient temperature at a dis...


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