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BY550-1000

EIC discrete Semiconductors
Part Number BY550-1000
Manufacturer EIC discrete Semiconductors
Description SILICON RECTIFIER DIODES
Published Mar 23, 2005
Detailed Description BY550-50 ~ BY550-1000 PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * * * * * High current capability High surge cur...
Datasheet PDF File BY550-1000 PDF File

BY550-1000
BY550-1000

Overview
BY550-50 ~ BY550-1000 PRV : 50 - 1000 Volts Io : 5.
0 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES DO - 201AD 0.
21 (5.
33) 0.
19 (4.
83) 1.
00 (25.
4) MIN.
0.
375 (9.
53) 0.
285 (7.
24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.
21 grams 0.
052 (1.
32) 0.
048 (1.
22) 1.
00 (25.
4) MIN.
Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.
375"(9.
5mm...


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