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K7A803601M

Samsung semiconductor
Part Number K7A803601M
Manufacturer Samsung semiconductor
Description 256Kx36 & 512Kx18 Synchronous SRAM
Published Nov 23, 2017
Detailed Description K7A803601M K7A801801M 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Bu...
Datasheet PDF File K7A803601M PDF File

K7A803601M
K7A803601M

Overview
K7A803601M K7A801801M 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev.
No.
History 0.
0 Initial draft 0.
1 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max.
0.
2 Remove 119BGA Package Type.
0.
3 Change DC Characteristics.
ISB value from 65mA to 110mA at -72 ISB value from 60mA to 110mA at -85 ISB value from 50mA to 100mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA to 30mA 0.
4 1.
Changed tCD from 4.
0ns to 4.
2ns at -85.
Changed tOE from 4.
0ns to 4.
2ns at -85.
2.
Changed DC condition at Icc and parameters Icc ; from 375mA to 400mA at -72, from 340mA to 380mA at -85, from 300mA to 350mA at -10, ISB ; from 110mA to 130mA at -72, from 110mA to 130mA at -85, from 100mA to 120mA at -10 0.
5 ADD VDDQ Supply voltage( 2.
5V ) 0.
6 Changed VOL Max value from 0.
2V to 0.
4V at 2.
5V I/O.
1.
0 Final spec Release.
2.
0 1.
Remove VDDQ Supply voltage( 2.
5V I/O ) 3.
0 1.
Add VDDQ ...


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