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EDB8132B4PB-8D-F-R

Micron Technology
Part Number EDB8132B4PB-8D-F-R
Manufacturer Micron Technology
Description LPDDR2 SDRAM
Published Dec 3, 2017
Detailed Description Preliminary‡ 168-Ball LPDDR2 SDRAM Addendum Features Data Sheet Addendum: LPDDR2 SDRAM EDB8132B4PB-8D-F-R, EDB8132B4PB-...
Datasheet PDF File EDB8132B4PB-8D-F-R PDF File

EDB8132B4PB-8D-F-R
EDB8132B4PB-8D-F-R

Overview
Preliminary‡ 168-Ball LPDDR2 SDRAM Addendum Features Data Sheet Addendum: LPDDR2 SDRAM EDB8132B4PB-8D-F-R, EDB8132B4PB-8D-F-D Features This addendum documents features of the Micron® 4Gb Mobile Low-Power DDR2 SDRAM (LPDDR2) device.
This addendum does not provide detailed device information.
The standard density-specific device data sheet provides a complete description of device functionality, operating modes, and specifications unless specified herein.
Information provided here is in addition to or supersedes information in the device data sheet.
• Ultra-low-voltage core and I/O power supplies • Frequency range – 400 MHz (data rate: 800 Mb/s/pin) • 4n prefetch DDR architecture • 8 internal banks for concurrent operation • Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge • Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c) • Programmable READ and WRITE latencies (RL/WL) • Burst length: 4, 8, and 16 ...


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