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2N3634

Part Number	2N3634
Manufacturer	TT
Description	SILICON PNP TRANSISTOR
Published	Dec 7, 2017
Detailed Description	SILICON PNP TRANSISTOR 2N3634 • General Purpose PNP Silicon Transistor • High Voltage, High Speed Saturated Switching • ...
Datasheet	2N3634 PDF File

Overview

SILICON PNP TRANSISTOR 2N3634 • General Purpose PNP Silicon Transistor • High Voltage, High Speed Saturated Switching • Low Power Amplifier Applications • Hermetic TO39 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -140V VCEO Collector – Emitter Voltage -140V VEBO Emitter – Base Voltage -5.
0V IC Continuous Collector Current -1.
0A PD Total Power Dissipation at TA = 25°C 1.
0W Derate Above 25°C 5.
71mW/°C TC = 25°C 5.
0W Derate Above 25°C 28.
6mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Min.
Typ.
Max.
175 35 Unit °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is b...

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